2D GeSe/SnS2(SnSe2) broken-gap heterostructures for tunnel field-effect transistors applications. (21st August 2019)

• Record Type: Journal Article
• Authors: Wang, Tianxing; Zhang, Qian; Li, Jingbo; Xia, Congxin
• Is Part Of: Journal of physics. Volume 52:Number 45(2019)
• Publication Date: 2019-08-21
• Subjects: GeSe -- SnS2 -- SnSe2 -- heterostructures -- field-effect transistors; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ab37c5
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Two-dimensional (2D) materials-based van der Waals heterostructures (vdWHs) provide a platform to realize novel physical phenomena for future nanoelectronic devices. Here, our theoretical results indicate that the 2D GeSe/SnS2 (SnSe2 ) vdWHs possess the broken-gap band alignment and can be potentially utilized in the tunnel field-effect transistors (TFETs). Moreover, negative electric field can keep type-III band alignment and enlarge the tunneling window, while the positive electric field can transform the type-III to type-I or type-II band alignments for the GeSe/ SnS2 (SnSe2 ) vdWHs. Thus, these studies open the way to fabricate the 2D materials-based TFETs and the possibility of multi-functional nanodevices applications.