Gallium Nitride: Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth (Adv. Mater. Interfaces 18/2019). Issue 18 (23rd September 2019)

• Record Type: Journal Article
• Authors: Park, Jeong‐Hwan; Lee, Jun‐Yeob; Park, Mun‐Do; Min, Jung‐Hong; Lee, Je‐Sung; Yang, Xu; Kang, Seokjin; Kim, Sang‐Jo; Jeong, Woo‐Lim; Amano, Hiroshi; Lee, Dong‐Seon
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 18(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-23
• Subjects: gallium nitride -- graphene -- MOCVD -- substrate decomposition; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201970114
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : The occurrence of graphene loss due to nitrogen, which Jeong‐Hwan Park, Hiroshi Amano, Dong‐Seon Lee, and co‐workers claim to occur in the article number1900821, generated from GaN decomposition. In the bottom side of the image, graphene loss is occurring by GaN template decomposition while the top side of the image no decomposition and graphene‐loss. During the decomposition, nitrogen and carbon escape from the substrate leaving gallium on the surface.