One-step synthesis of tunable nitrogen-doped graphene from graphene oxide and its high performance field emission properties. (October 2019)

• Record Type: Journal Article
• Authors: Yu, Shuxian; Tang, Renjie; Zhang, Kun; Wu, Siyu; Yang, Xinliang; Wu, Wenjie; Chen, Yijun; Shen, Yan; Zhang, Xiaolei; Qian, Junchao; Song, Yenan; Sun, Zhuo
• Is Part Of: Vacuum. Volume 168(2019)
• Publication Date: 2019-10
• Subjects: Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2019.108817
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Simultaneous reduction, repairing and doping of graphene oxide has been realized by the chemical vapor deposition method, using acetonitrile as a nitrogen source. A step-wise increase of acetonitrile partial pressure from 15 to 90 Pa results in nitrogen doped graphene (NG) with gradually tuning N-doping concentration from 0.38 to 0.66 at% and systematically rising graphite-N ratio from 23.25 to 45.39%, which in turn modulates field emission performance and enhance the stability. Raman spectroscopy and X-ray photoelectron spectroscopy suggest pyrrolic-N and pyridinic-N doping bring defects, while defects decrease as N-doping concentration increases due to the rising of graphite-N ratio. Proper defects may increase emission site density and N-doping can reduce work function. When N-doping concentration is controlled at 0.42 at%, NG exhibits the considerable decreasing of turn-on field from 3.35 to 2.18 V/μm at the emission current of 10 μA/cm 2 and increasing of field enhancement factor from 1835 to 2967. It also reveals a good field emission stability with no degradation, which is superior to pristine reduced GO emitters. It is suggested the NG with tuning concentration of three type nitrogen emitter is a widely candidate for various field emission devices and applications.