Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1. Issue 36 (9th September 2019)
- Record Type:
- Journal Article
- Title:
- Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1. Issue 36 (9th September 2019)
- Main Title:
- Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1
- Authors:
- Rosário, Carlos M. M.
Thöner, Bo
Schönhals, Alexander
Menzel, Stephan
Meledin, Alexander
Barradas, Nuno P.
Alves, Eduardo
Mayer, Joachim
Wuttig, Matthias
Waser, Rainer
Sobolev, Nikolai A.
Wouters, Dirk J. - Abstract:
- Abstract : A detailed study of the electrical transport in TaO x thin films with x ∼ 1 provides an insight into the conduction in conductive filaments inside Ta2 O5 -based resistive switching devices. Abstract : The resistive switching in metal–oxide thin films typically occurs via modulation of the oxygen content in nano-sized conductive filaments. For Ta2 O5 -based resistive switching devices, the two current models consider filaments composed of oxygen vacancies and those containing metallic Ta clusters. The present work tries to resolve this dispute. The filaments in Ta2 O5 were formerly shown to exhibit the same electrical transport mechanisms as TaO x thin films with x ∼ 1.0. In this paper, sputtered thin films of pure β-Ta and of TaO x with different oxygen concentrations are studied and compared in terms of their structure and electrical transport. The structural analysis reveals the presence of Ta clusters in the TaO x films. Identical electrical transport characteristics were observed in the TaO x films with x ∼ 1.0 and in the β-Ta film. Both show the same transport mechanism, a carrier concentration on the order of 10 22 cm −3 and a positive magnetoresistance associated with weak antilocalization at T < 30 K. It is concluded that the electrical transport in the TaO x films with x ∼ 1.0 is dominated by percolation through Ta clusters. This means that the transport in the filaments is also determined by percolation through Ta clusters, strongly supporting theAbstract : A detailed study of the electrical transport in TaO x thin films with x ∼ 1 provides an insight into the conduction in conductive filaments inside Ta2 O5 -based resistive switching devices. Abstract : The resistive switching in metal–oxide thin films typically occurs via modulation of the oxygen content in nano-sized conductive filaments. For Ta2 O5 -based resistive switching devices, the two current models consider filaments composed of oxygen vacancies and those containing metallic Ta clusters. The present work tries to resolve this dispute. The filaments in Ta2 O5 were formerly shown to exhibit the same electrical transport mechanisms as TaO x thin films with x ∼ 1.0. In this paper, sputtered thin films of pure β-Ta and of TaO x with different oxygen concentrations are studied and compared in terms of their structure and electrical transport. The structural analysis reveals the presence of Ta clusters in the TaO x films. Identical electrical transport characteristics were observed in the TaO x films with x ∼ 1.0 and in the β-Ta film. Both show the same transport mechanism, a carrier concentration on the order of 10 22 cm −3 and a positive magnetoresistance associated with weak antilocalization at T < 30 K. It is concluded that the electrical transport in the TaO x films with x ∼ 1.0 is dominated by percolation through Ta clusters. This means that the transport in the filaments is also determined by percolation through Ta clusters, strongly supporting the metallic Ta filament model. … (more)
- Is Part Of:
- Nanoscale. Volume 11:Issue 36(2019)
- Journal:
- Nanoscale
- Issue:
- Volume 11:Issue 36(2019)
- Issue Display:
- Volume 11, Issue 36 (2019)
- Year:
- 2019
- Volume:
- 11
- Issue:
- 36
- Issue Sort Value:
- 2019-0011-0036-0000
- Page Start:
- 16978
- Page End:
- 16990
- Publication Date:
- 2019-09-09
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c9nr05285b ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11785.xml