Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods. Issue 1 (31st December 2018)

• Record Type: Journal Article
• Authors: Vila-Fungueiriño, José Manuel; Gázquez, Jaume; Magén, César; Saint-Girons, Guillaume; Bachelet, Romain; Carretero-Genevrier, Adrián
• Is Part Of: Science and technology of advanced materials. Volume 19:Issue 1(2018)
• Page Start: 702
• Page End: 710
• Publication Date: 2018-12-31
• Subjects: Thin-films -- functional oxides -- silicon integration -- chemical solution deposition -- molecular beam epitaxy; 10 Engineering and Structural materials -- 306 Thin film / Coatings -- 102 Porous / Nanoporous / Nanostructured materials -- 203 Magnetics / Spintronics / Superconductors -- 503 TEM, STEM, SEM -- 301 Chemical syntheses / processing; Materials -- Technological innovations -- Periodicals; 620.112
• DOI: 10.1080/14686996.2018.1520590
• Languages: English
• ISSNs: 1468-6996

Abstract

ABSTRACT: Half-metallic ferromagnetic La0.7 Sr0.3 MnO3 (LSMO) represents an appealing candidate to be integrated on silicon substrates for technological devices such as sensors, data storage media, IR detectors, and so on. Here, we report high-quality epitaxial LSMO thin films obtained by an original combination of chemical solution deposition (CSD) and molecular beam epitaxy (MBE). A detailed study of the thermal, chemical, and physical compatibility between SrTiO3 (STO)/Si buffer layers and LSMO films, grown by MBE and CSD, respectively, enables a perfect integration of both materials. Importantly, we show a precise control of the coercive field of LSMO films by tuning the mosaicity of the STO/Si buffer layer. These results demonstrate the enormous potential of combining physical and chemical processes for the development of low-cost functional oxide-based devices compatible with the complementary metal oxide semiconductor technology. Graphical Abstract: