One-step growth of thin film SnS with large grains using MOCVD. Issue 1 (31st December 2018)

• Record Type: Journal Article
• Authors: Clayton, Andrew J.; Charbonneau, Cecile M. E.; Tsoi, Wing C.; Siderfin, Peter J.; Irvine, Stuart J. C.
• Is Part Of: Science and technology of advanced materials. Volume 19:Issue 1(2018)
• Page Start: 153
• Page End: 159
• Publication Date: 2018-12-31
• Subjects: Thin film SnS -- photovoltaics -- metal organic chemical vapour deposition; 50 Energy Materials -- 209 Solar cell / Photovoltaics -- 306 Thin film / Coatings -- 500 Characterization; Materials -- Technological innovations -- Periodicals; 620.112
• DOI: 10.1080/14686996.2018.1428478
• Languages: English
• ISSNs: 1468-6996

Abstract

Abstract: Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin–doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430–470 °C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn2 S3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn2 S3 was deduced to have resulted for all growth conditions. Abstract :