Effect of annealing temperature on crystalline structure and domains configuration of BiFeO3 films. (18th November 2018)

• Record Type: Journal Article
• Authors: Hao, Junxiang; Chen, Fei; Fu, Chunlin; Cai, Wei; Sun, Yuanyang; Chen, Yao; Wang, Fengqi
• Is Part Of: Ferroelectrics. Volume 536(2018)
• Page Start: 122
• Page End: 131
• Publication Date: 2018-11-18
• Subjects: Bismuth ferrite -- thin films -- grain size -- ferroelectric domain -- annealing temperature; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2018.1528935
• Languages: English
• ISSNs: 0015-0193

Abstract

Abstract: The BiFeO3 (BFO) thin films were prepared on Pt(111)TiO2 /SiO2 /Si substrates by the sol-gel method at different annealing temperatures. The crystalline structure and domain configuration of BFO films have been investigated by X-ray diffraction and piezoelectric force microscope (PFM), respectively. From the X-ray patterns, there are less impurity peaks when the BFO films are annealed at 600 °C. From the PFM images, the polarization is random and the grain size decreases with the increasing of annealing temperature. It is found that the possibility of single-domain grain formation increased with the decreasing of grain size, and the biggest single-domain grains is about 200 nm in diameter. Besides, a typical domain wall is observed, and it is 71° or 109°.