Low temperature fabrication of thermochromic VO2 thin films by low-pressure chemical vapor deposition. Issue 18 (9th February 2017)

• Record Type: Journal Article
• Authors: Guo, Beibei; Chen, Lanli; Shi, Siqi; Ishaq, Ahmad; Wan, Dongyun; Chen, Zhang; Zhang, Liangmiao; Luo, Hongjie; Gao, Yanfeng
• Is Part Of: RSC advances. Volume 7:Issue 18(2017)
• Page Start: 10798
• Page End: 10805
• Publication Date: 2017-02-09
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra25071h
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : High-performance thermochromic VO2 films were fabricated by LPCVD, and the mechanism for their low transition temperatures was studied using first-principles calculations. Abstract : VO2 (M) is of special interest as the material with the most potential for future application in smart windows and switching devices. However, a number of drawbacks need to be overcome, including the high processing temperature of current synthesis techniques and low thermochromic properties. This work reports the fabrication of high-performance thermochromic VO2 thin films at low temperatures below 400 °C based on a low-pressure chemical vapor deposition (LPCVD) with a vanadium(iii ) acetylacetonate precursor. Proper tuning of the process parameters is found to be critical in fabricating thickness-controllable highly-crystalline VO2 films. For an ∼62 nm thick VO2 film, visible transmittances of 52.3% (annealed at 400 °C) and 52.7% (annealed at 350 °C) were obtained. The corresponding solar energy modification abilities (Δ T sol ) were 9.7% and 7.1%, and the transition temperatures were 45.1 °C and 50.9 °C. The underlying microscopic mechanism was studied by first-principles calculations and the results indicated that improved performances, including a low transition temperature, could be achieved by properly controlling the annealing temperature, ascribed to the combined effect of strain and oxygen vacancies. Moreover, the initial use of a pre-grown seed layer induced fast grain growth, which is favorable for further decreasing the deposition and annealing temperature to 325 °C.