Fabrication and characterization of arc melted Si/B co-doped boron carbide. Issue 16 (December 2019)

• Record Type: Journal Article
• Authors: Yang, Qirong; Hwang, Chawon; Marvel, Christopher J.; Chauhan, Ankur; Domnich, Vladislav; Khan, Atta U.; LaSalvia, Jerry C.; Harmer, Martin P.; Hemker, Kevin J.; Haber, Richard A.
• Is Part Of: Journal of the European Ceramic Society. Volume 39:Issue 16(2019)
• Page Start: 5156
• Page End: 5166
• Publication Date: 2019-12
• Subjects: Boron carbide -- Arc melting -- Si/B co-doping -- Stress-induced amorphization -- Transmission electron microscopy; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2019.08.024
• Languages: English
• ISSNs: 0955-2219

Abstract

Abstract: Boron carbide undergoes stress-induced amorphization when subjected to large non-hydrostatic stresses that exceed its elastic limit. This has been proposed as the source for the abrupt loss of shear strength in boron carbide which limits its engineering applications. Si/B co-doping was suggested as one of the means to suppress stress-induced amorphization but this has not been experimentally verified. Here, by utilizing arc melting, we prepared Si/B co-doped boron carbide with increased Si content as compared to conventional methods. Through Raman analysis in conjunction with indention and elemental analyses based on SEM and STEM (ζ-factor microanalysis), it is suggested that Si/B co-doping is a promising avenue for suppressing stress-induced amorphization. A comprehensive characterization of microstructure, chemistry, and structural change of boron carbide as a result of Si/B co-doping was elucidated.