Cite
HARVARD Citation
Aronne, A. et al. (2017). Electronic properties of TiO2-based materials characterized by high Ti3+ self-doping and low recombination rate of electron–hole pairs. RSC advances. 7 (4), pp. 2373-2381. [Online].
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Aronne, A. et al. (2017). Electronic properties of TiO2-based materials characterized by high Ti3+ self-doping and low recombination rate of electron–hole pairs. RSC advances. 7 (4), pp. 2373-2381. [Online].