Direct transfer of graphene and application in low-voltage hybrid transistors. Issue 4 (12th January 2017)
- Record Type:
- Journal Article
- Title:
- Direct transfer of graphene and application in low-voltage hybrid transistors. Issue 4 (12th January 2017)
- Main Title:
- Direct transfer of graphene and application in low-voltage hybrid transistors
- Authors:
- Zhu, Huihui
Liu, Ao
Shan, Fukai
Yang, Wenrong
Barrow, Colin
Liu, Jingquan - Abstract:
- Abstract : Scotch tape assisted direct transfer of graphene is presented. Transferred graphene can act as a carrier transport layer in In2 O3 /graphene/ZrO2 transistor. Abstract : A novel scotch tape assisted direct transfer of graphene onto different flexible and rigid substrates, including paper, polyethylene terephthalate, flat and curved glass, SiO2 /Si, and a solution-processed high- k dielectric layer is presented. This facile graphene transfer process is driven by the difference in adhesion energy of graphene with respect to tape and a target substrate. In addition, the graphene films transferred by scotch tape are found to be cleaner, more continuous, less doped and higher-quality than those transferred by PMMA. Based on that, the tape transferred graphene is employed as a carrier transport layer in oxide thin-film transistors (TFTs) with different gate dielectrics ( i.e., SiO2 and high- k ZrO2 ). The In2 O3 /graphene/SiO2 TFTs exhibit a high electron mobility of 404 cm 2 V −1 s −1 and a high on/off current ratio of 10 5, while the counterpart In2 O3 /graphene/ZrO2 TFTs exhibit improved electron transport properties at an ultra-low operating voltage of 3 V, which is 20 times lower than that of SiO2 -based devices. In contrast, the ZrO2 -based TFTs with PMMA-transferred graphene exhibit no detective electrical properties. Therefore, the proposed scotch tape assisted transfer method will be particularly useful for the production of graphene films and otherAbstract : Scotch tape assisted direct transfer of graphene is presented. Transferred graphene can act as a carrier transport layer in In2 O3 /graphene/ZrO2 transistor. Abstract : A novel scotch tape assisted direct transfer of graphene onto different flexible and rigid substrates, including paper, polyethylene terephthalate, flat and curved glass, SiO2 /Si, and a solution-processed high- k dielectric layer is presented. This facile graphene transfer process is driven by the difference in adhesion energy of graphene with respect to tape and a target substrate. In addition, the graphene films transferred by scotch tape are found to be cleaner, more continuous, less doped and higher-quality than those transferred by PMMA. Based on that, the tape transferred graphene is employed as a carrier transport layer in oxide thin-film transistors (TFTs) with different gate dielectrics ( i.e., SiO2 and high- k ZrO2 ). The In2 O3 /graphene/SiO2 TFTs exhibit a high electron mobility of 404 cm 2 V −1 s −1 and a high on/off current ratio of 10 5, while the counterpart In2 O3 /graphene/ZrO2 TFTs exhibit improved electron transport properties at an ultra-low operating voltage of 3 V, which is 20 times lower than that of SiO2 -based devices. In contrast, the ZrO2 -based TFTs with PMMA-transferred graphene exhibit no detective electrical properties. Therefore, the proposed scotch tape assisted transfer method will be particularly useful for the production of graphene films and other two-dimensional materials in more cost-effective and environmentally friendly modes for broad practical applications beyond graphene-based field-effect transistors (GFETs). … (more)
- Is Part Of:
- RSC advances. Volume 7:Issue 4(2017)
- Journal:
- RSC advances
- Issue:
- Volume 7:Issue 4(2017)
- Issue Display:
- Volume 7, Issue 4 (2017)
- Year:
- 2017
- Volume:
- 7
- Issue:
- 4
- Issue Sort Value:
- 2017-0007-0004-0000
- Page Start:
- 2172
- Page End:
- 2179
- Publication Date:
- 2017-01-12
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c6ra26452b ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11706.xml