Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process. Issue 1635 (27th January 2014)

• Record Type: Journal Article
• Authors: Hemmi, Tetsuro; Nakayama, Koji; Asano, Katsunori; Miyazawa, Tetsuya; Tsuchida, Hidekazu
• Is Part Of: MRS proceedings. Issue 1635:(2014)
• Publication Date: 2014-01-27
• Subjects: dislocations, -- luminescence, -- electrical properties; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2014.105
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: The forward voltage degradation in 4H-SiC PiN diodes with a simplified process and that in 4H-SiC pin diodes with additional processes are investigated. Photoluminescence images were also observed to identify the cause of forward voltage degradation. The forward voltage degradations of 4H-SiC PiN diodes with additional processes were larger than those with a simplified process. Observing photoluminescence images of diodes after a current stress test showed that less than 25% of Shockley-type stacking faults in 4H-SiC PiN diodes with a simplified process are caused by half-loop dislocations, which are generated not only in the additional processes but also in the whole device fabrication process. With additional processes, those rates are over 65%, which may be reduced by eliminating half-loop dislocations due to the optimization of the process condition and sequence.