Crystallization of amorphous‐Si using nanosecond laser interference method. Issue 1 (16th November 2018)
- Record Type:
- Journal Article
- Title:
- Crystallization of amorphous‐Si using nanosecond laser interference method. Issue 1 (16th November 2018)
- Main Title:
- Crystallization of amorphous‐Si using nanosecond laser interference method
- Authors:
- Kang, Min Jin
Kim, Minyeong
Hwang, Eui Sun
Noh, Jiwhan
Shin, Sung Tae
Cheong, Byoung‐Ho - Abstract:
- Abstract: Laser crystallization of a 50‐nm thick amorphous‐Si (a‐Si) thin film on glass substrate was examined by a Nd:YAG (λ = 1064 nm) nanosecond laser and a two‐beam laser interference method. In spite of the low absorption rate of the laser wavelength in the a‐Si, crystallized Si ripple patterns were observed following a single laser pulse irradiation. The atomic force microscope (AFM) measurement revealed that surface ripple arrays are protruded as high as 120 nm at the positions corresponding to the maximum laser intensity and the ripples are composed of narrow double peaks with a separation of 1 μm. Raman image mapping was used to plot the spatial distribution of the crystallized Si phase. It was found that a 1064‐nm‐wavelength nanosecond laser could crystallize an a‐Si thin film into polycrystalline‐Si (poly‐Si) by nonlinear absorption under high laser energy irradiation. Abstract : Laser crystallization of an amorphous‐Si (a‐Si) thin film was examined by an Nd:YAG (1064 nm) nanosecond laser and a two‐beam laser interference method. In spite of the low absorption rate of the laser wavelength in the a‐Si, crystallized Si ripple patterns were observed following a single laser pulse irradiation. The atomic force microscope measurement revealed that surface ripple arrays are protruded as high as 120 nm at the positions corresponding to the maximum laser intensity and the ripples are composed of narrow double peaks with a separation of 1 μm.
- Is Part Of:
- Journal of the Society for Information Display. Volume 27:Issue 1(2019)
- Journal:
- Journal of the Society for Information Display
- Issue:
- Volume 27:Issue 1(2019)
- Issue Display:
- Volume 27, Issue 1 (2019)
- Year:
- 2019
- Volume:
- 27
- Issue:
- 1
- Issue Sort Value:
- 2019-0027-0001-0000
- Page Start:
- 34
- Page End:
- 40
- Publication Date:
- 2018-11-16
- Subjects:
- recrystallization -- semiconducting silicon -- single crystal growth -- surface structure
Information display systems -- Periodicals
621.38154205 - Journal URLs:
- http://ejournals.ebsco.com/direct.asp?JournalID=113697 ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1938-3657 ↗
http://scitation.aip.org/jsid/ ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/jsid.745 ↗
- Languages:
- English
- ISSNs:
- 1071-0922
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11708.xml