Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity. (25th March 2018)
- Record Type:
- Journal Article
- Title:
- Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity. (25th March 2018)
- Main Title:
- Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity
- Authors:
- Yin, Jun
Zeng, Fei
Wan, Qin
Li, Fan
Sun, Yiming
Hu, Yuandong
Liu, Jialu
Li, Guoqi
Pan, Feng - Abstract:
- Abstract: A critical routine for memristors applied to neuromorphic computing is to approximate synaptic dynamic behaviors as closely as possible. A type of homogenous bilayer memristor with a structure of W/HfO y /HfO x /Pt is designed and constructed in this paper. The memristor replicates the structure and oxygen vacancy ( V O ) distribution of a complete synapse and its Ca 2+ distribution, respectively, after the forming process. The detailed characterizations of its atomic structure and phase transformation in and near the conductive channel demonstrate that the crystallite kinetics are adaptively coupled with the V O migration prompted by directional external bias. The extrusion (injection) of the V O s and the subsequent crystallite coalescence (separation), phase transformation, and alignment (misalignment) resemble closely the Ca 2+ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity allow the memristor to emulate diverse synaptic plasticity. This study supplies a kinetic process of conductive channel theory for bilayer memristors. In addition, our memristor has very low energy consumption (5–7.5 fJ per switching for a 0.5 µm diameter device, compatible with a synaptic event) and is therefore suitable for large‐scale integration used in neuromorphic networks. Abstract : A homogenous bilayer memristor replicates structure and oxygen vacancy ( V O ) distribution of a complete synapse and Ca 2+ distribution, respectively. CrystalliteAbstract: A critical routine for memristors applied to neuromorphic computing is to approximate synaptic dynamic behaviors as closely as possible. A type of homogenous bilayer memristor with a structure of W/HfO y /HfO x /Pt is designed and constructed in this paper. The memristor replicates the structure and oxygen vacancy ( V O ) distribution of a complete synapse and its Ca 2+ distribution, respectively, after the forming process. The detailed characterizations of its atomic structure and phase transformation in and near the conductive channel demonstrate that the crystallite kinetics are adaptively coupled with the V O migration prompted by directional external bias. The extrusion (injection) of the V O s and the subsequent crystallite coalescence (separation), phase transformation, and alignment (misalignment) resemble closely the Ca 2+ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity allow the memristor to emulate diverse synaptic plasticity. This study supplies a kinetic process of conductive channel theory for bilayer memristors. In addition, our memristor has very low energy consumption (5–7.5 fJ per switching for a 0.5 µm diameter device, compatible with a synaptic event) and is therefore suitable for large‐scale integration used in neuromorphic networks. Abstract : A homogenous bilayer memristor replicates structure and oxygen vacancy ( V O ) distribution of a complete synapse and Ca 2+ distribution, respectively. Crystallite kinetics are adaptively coupled with the V O migration, including crystallite coalescence, phase transformation, and alignment, which resemble closely the Ca 2+ flux and neurotransmitter dynamics in chemical synapses. Such adaptation and similarity permits emulating diverse synaptic plasticity. … (more)
- Is Part Of:
- Advanced functional materials. Volume 28:Number 19(2018)
- Journal:
- Advanced functional materials
- Issue:
- Volume 28:Number 19(2018)
- Issue Display:
- Volume 28, Issue 19 (2018)
- Year:
- 2018
- Volume:
- 28
- Issue:
- 19
- Issue Sort Value:
- 2018-0028-0019-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2018-03-25
- Subjects:
- crystallite coalescence -- oxide memristors -- oxygen vacancy -- phase transformation -- synaptic dynamics
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.201706927 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11721.xml