Enhanced Device Stability of Ionic Gating Molybdenum Disulfide Transistors. Issue 9 (20th May 2019)

• Record Type: Journal Article
• Authors: Yang, Suk; Jang, Sukjin; Choi, Daehwan; Namgung, Seok Daniel; Kim, Hyung-Jun; Kwon, Jang-Yeon
• Is Part Of: Physica status solidi. Volume 13:Issue 9(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-20
• Subjects: electrical stability -- gate bias stress -- gate dielectrics -- hysteresis -- ion gels -- molybdenum disulfide; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201900142
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : The application of ion gels as gate dielectrics having an excellent mechanical flexibility and high capacitance to molybdenum disulfide (MoS2 ) devices has been extensively studied; however, some issues remain unaddressed with regard to device stability such as gate leakage current, hysteresis, and bias stress instability. This study suggests a fabrication process for the ionic gating of the MoS2 device to enhance the device stability by laminating the ion gel film onto the MoS2 transistor using a cut‐and‐stick method and adding a passivation layer to remove unintentional parasitic capacitances generated by the capacitive coupling effect. The ionic gating MoS2 transistor fabricated via this process operates at a low voltage (<1 V) and exhibits superior electrical characteristics such as low gate leakage currents (≈10 −11 A), high on–off ratio (>10 6 ), and low hysteresis (<0.05 V). To further investigate the device stability, bias stress instability of the ionic gating MoS2 transistor is examined. The charge‐trapping mechanism is the main cause of threshold voltage shifts under gate bias stress. Abstract : Ionic gating MoS2 transistors are fabricated by the new fabrication process to enhance the electrical stability such as low gate leakage current, high on–off ratio, and hysteresis. Also, bias stress instability of the ionic gating MoS2 transistor is examined. This study provides a prospective pathway for practical applications in a range of flexible and printable electronic technologies.