Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs. Issue 18 (18th September 2019)

• Record Type: Journal Article
• Authors: Ajmal Khan, Muhammad; Matsuura, Eriko; Kashima, Yukio; Hirayama, Hideki
• Is Part Of: Physica status solidi. Volume 216:Issue 18(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-09-18
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201970059
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : 17 mW semiconducting aluminium gallium nitride (AlGaN)‐based ultraviolet‐B (UVB) light‐emitting diodes (LEDs) at 300 nm emission grown on AlN template are expected to be useful for production of vitamin D3 in the human body as well as for killing of tomato mosaic virus (ToMV) in tomato. UV‐light power is improved in AlGaN UVB LED using optimized undoped‐AlGaN final barrier of the quantum well. More details can be found in article number1900185 by Muhammad Ajmal Khan, and co‐workers.