Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage. Issue 18 (5th July 2019)

• Record Type: Journal Article
• Authors: Ranade, Ajinkya K.; Desai, Pradeep; Mahyavanshi, Rakesh; Tanemura, Masaki; Kalita, Golap
• Is Part Of: Physica status solidi. Volume 216:Issue 18(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-07-05
• Subjects: gallium nitride -- photoresponsive devices -- temperature dependent -- γ-copper iodide; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900200
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Here, the formation of an effective heterojunction with the p‐type γ‐copper iodide (γ‐CuI) and n‐type gallium nitride (GaN) with excellent photodiode characteristics is demonstrated. The γ‐CuI/GaN heterojunction shows good rectification characteristics up to applied bias voltage of ±20 V with low saturation current, thus confirming the suitability of the γ‐CuI film. The heterojunction diode and ultraviolet (UV) photoresponsive characteristics of the device are elucidated with temperature‐dependent transport behavior analysis. With an increase in temperature, reverse saturation current is enhanced, whereas the diode ideality factor is reduced. The heterojunction device shows UV photoresponsive photovoltaic action with a prominent photovoltage of 0.93 V. The temperature‐dependent photovoltaic action is also investigated in the temperature range of 298–373 K, where the open circuit voltage ( V oc ) decreases with increase in temperature. The photovoltaic action is obtained at a temperature as high as 373 K, indicating that the γ‐CuI/GaN photoresponsive device is quite stable with excellent photovoltage. This study reveals that the effectiveness of γ‐CuI/GaN heterojunction and diode properties to fabricate a heterojunction photodiode with excellent photovoltage and photoresponsivity. Abstract : Herein, the formation of an effective heterojunction with the p‐type γ‐copper iodide (γ‐CuI) and n‐type gallium nitride (GaN) with excellent photodiode characteristics is reported. The heterojunction device shows ultraviolet (UV) photoresponsive photovoltaic action with a prominent photovoltage. Temperature‐dependent photovoltaic action is investigated in the temperature range of 298–373 K. This study reveals the effective heterojunction diode properties to fabricate a photodiode.