Influence of MoS2‐Silicon Interface States on Spectral Photoresponse Characteristics. Issue 18 (15th July 2019)

• Record Type: Journal Article
• Authors: Desai, Pradeep; Ranade, Ajinkya K.; Mahyavanshi, Rakesh; Tanemura, Masaki; Kalita, Golap
• Is Part Of: Physica status solidi. Volume 216:Issue 18(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-07-15
• Subjects: heterojunction -- interfaces -- photoresponsivity -- spectral response; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900349
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Fabrication of heterojunction with transition metal dichalcogenide (TMDC) layers and convention bulk semiconductor is of great interest for optoelectronic device applications. Herein, the influence of interface in a fabricated molybdenum sulfide (MoS2 ) and p‐type silicon (Si) heterostructure on bias‐dependent photoresponse is demonstrated. The MoS2 layers deposited on the p‐type Si wafer show a photovoltaic action and a photoresponsivity of 139 mA W −1 at 860 nm wavelength for a bias voltage of −5 V. It is observed that the spectral photoresponse of the device enhanced considerably with an applied bias voltage than that of the photovoltaic mode due to an effective field effect across the heterojunction. The increase in photoresponsivity at a higher wavelength (>600 nm) is significant than that of lower wavelength (<500 nm) at the bias voltage. This may due to surface recombination of photocarriers for higher energy photons in the presence of interface states at the MoS2 /Si heterojunction. The understanding of photocarriers behavior in the fabricated MoS2 /Si heterojunction interface can be critical to develop high photoresponsive heterojunction devices. Abstract : Herein, the influence of interface in a MoS2 /silicon heterostructure on bias‐dependent photoresponse is demonstrated. It is observed that the spectral photoresponse of the device enhanced with an applied bias voltage due to an effective field effect. The increase in photoresponsivity at a higher wavelength is significant than that of lower wavelength indicating the recombination of photocarriers in the presence of interface states.