Charge-transfer complexes of sulfur-rich acceptors derived from birhodanines. Issue 35 (15th July 2019)

• Record Type: Journal Article
• Authors: Fan, Shuxiang; Kiyota, Yasuhiro; Iijima, Kodai; Ryo, Suho; Kawamoto, Tadashi; Le Gal, Yann; Lorcy, Dominique; Mori, Takehiko
• Is Part Of: CrystEngComm. Volume 21:Issue 35(2019)
• Page Start: 5227
• Page End: 5234
• Publication Date: 2019-07-15
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c9ce00952c
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : The title acceptors form charge-transfer complexes with mixed stacks, whose transistors are affected by the S–S interaction between the acceptors. Abstract : Sulfur-rich acceptors, birhodanines, 3, 3′-dialkyl-5, 5′-bithiazolidinylidene-2, 2′-dione-4, 4′-dithiones (OS- R, R = Et and Pr) and 3, 3′-dialkyl-5, 5′-bithiazolidinylidene-4, 4′-dione-2, 2′-dithiones (SO- R, R = Et), as well as the sulfur analogues, 3, 3′-dialkyl-5, 5′-bithiazolidinylidene-2, 4, 2′, 4′-tetrathiones (SS- R, R = Et, Pr), form 1 : 1 composition charge-transfer complexes with donors such as pyrene, perylene, and coronene. These complexes have mixed stacks, and theSS- R complexes show n-channel transistor properties due to the intercolumnar S⋯S contacts between the acceptors. By contrast, theOS- R andSO- R complexes exhibit basically hole-dominant ambipolar properties due to the absence of S⋯S contacts. Accordingly, the charge transport is governed mostly by the direct interchain interactions instead of the transport along the columns.