Cite
HARVARD Citation
Lu, W. et al. (2019). A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111). CrystEngComm. 21 (35), pp. 5211-5215. [Online].
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Lu, W. et al. (2019). A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111). CrystEngComm. 21 (35), pp. 5211-5215. [Online].