Mott-transition-based RRAM. (September 2019)

• Record Type: Journal Article
• Authors: Wang, Yue; Kang, Kyung-Mun; Kim, Minjae; Lee, Hong-Sub; Waser, Rainer; Wouters, Dirk; Dittmann, Regina; Yang, J. Joshua; Park, Hyung-Ho
• Is Part Of: Materials today. Volume 28(2019)
• Page Start: 63
• Page End: 80
• Publication Date: 2019-09
• Subjects: Materials science -- Periodicals; Metallurgy -- Periodicals; Metal-work -- Periodicals; Biomedical and Dental Materials -- Periodicals; Manufactured Materials -- Periodicals; Metals -- Periodicals; 620.11
• DOI: 10.1016/j.mattod.2019.06.006
• Languages: English
• ISSNs: 1369-7021

Abstract

Graphical abstract: Abstract: Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.