Design of a sub-1V CMOS reference voltage generator. (September 2019)

• Record Type: Journal Article
• Authors: Tsitouras, Athanasios; Sotiriadis, Paul P.
• Is Part Of: Microelectronics journal. Volume 91(2019)
• Page Start: 92
• Page End: 99
• Publication Date: 2019-09
• Subjects: Sub-1V design -- CMOS bandgap reference -- BGR -- Temperature coefficient -- Temperature range; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2019.05.023
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: In this paper a low complexity, sub-1V, reference voltage generator with low voltage sensitivity over PVT variation and high power supply rejection ratio (PSRR) is proposed. It consists of a traditional bandgap reference core where resistors are used for generating both the PTAT and CTAT currents, which are then added forming a temperature-independent current. A new 1 V modified folded cascode operational amplifier is proposed and used in the main bandgap's loop resulting in low offset, high loop gain and adequate loop phase margin of 58.9°. The loop consists of only two inverting stages and the circuit can be integrated entirely without the need of external large capacitors for frequency compensation. A regulated cascode current source is employed for accurately mirroring of the core temperature-independent current to a resistive load, where the reference voltage is generated. The proposed circuit was simulated in SPECTRE achieving an output reference voltage variation of 3.62%, without trimming, over process variation corners with ±10% variation of the 1 V power supply voltage and within the industrial temperature range, from −40 °C to 125 °C. The temperature coefficient from −40 °C to 125 °C is 6.81 ppm/°C at 1 V at the typical process corner. The PSRR at 1 Hz and the output RMS noise within a bandwidth of 100 MHz are −69.85 dB and 279 μV RMS, respectively, at the typical process corner, at a supply voltage of 1 V and temperature of 27 °C. Typical power consumption is 452 μA at 1 V.