Phase-change memory cycling endurance. (September 2019)

• Record Type: Journal Article
• Authors: Kim, SangBum; Burr, Geoffrey W.; Kim, Wanki; Nam, Sung-Wook
• Editors: Zhang, Wei; Mazzarello, Riccardo; Ma, Evan
• Is Part Of: MRS bulletin. Volume 44:Number 9(2019:Sep.)
• Page Start: 710
• Page End: 714
• Publication Date: 2019-09
• Subjects: memory, -- electromigration, -- thermal stresses; Materials -- Periodicals; 620.11
• DOI: 10.1557/mrs.2019.205
• Languages: English
• ISSNs: 0883-7694

Abstract

Abstract: Abstract : The cycling endurance of phase-change memory is one of the last hurdles to overcome to enable its adoption in the larger market for persistent memory products. Phase-change memory cycling endurance failures, whether they are stuck-SET (caused by elemental segregation) or stuck-RESET (caused by void formation), are caused by atomic migration. Various driving forces responsible for the atomic migration have been identified, such as hole-wind force, electrostatic force, and crystallization-induced segregation. We introduce several strategies to improve cycling endurance based on an understanding of driving forces and interactions among them. Utilizing some of these endurance-improving techniques, record-high phase-change memory cycling endurance at around 10 12 cycles has been recently reported using a confined phase-change memory cell with a metallic liner.