The effect of air annealing on the properties of MoO3 films and its application for organic light emitting diodes. (15th February 2018)

• Record Type: Journal Article
• Authors: Kao, Po-Ching; Chen, Ze-Hui; Yen, Hao-En; Liu, Tzu-Hsiang; Huang, Cheng-Liang
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 3(2018)Supplement 1
• Publication Date: 2018-02-15
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.03DA04
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In the present work, post-annealing modification in air was performed on the MoO3 films and its effect on the optoelectronic characteristics of organic light-emitting diodes (OLEDs) was investigated. When MoO3 was annealed at the proper temperature, the electroluminescent performances of OLEDs were improved. X-ray photoelectron spectroscopy (XPS) and Raman studies revealed that the air annealing process resulted in more crystalline and nearly stoichiometric in MoO3, leading to the enhancement of the photoluminescence (PL) intensity and transmittance. Moreover, the reduced oxygen vacancies caused by air annealing increase the work function of MoO3, resulting in the energy barrier reduction at the ITO/NPB interface, and consequently facilitating the hole injection and improving OLED performances.