Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates. (30th November 2017)

• Record Type: Journal Article
• Authors: Lu, Xiangmeng; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro
• Is Part Of: Applied physics express. Volume 11:Number 1(2018)
• Publication Date: 2017-11-30
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.015501
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: GaAs/Ge/GaAs heterostructures were grown on high-index (113)B GaAs substrates by molecular beam epitaxy. Sublattice reversal in GaAs/Ge/GaAs was identified by comparing the anisotropic etching profile of the epitaxial sample with that for reference (113)A and (113)B GaAs substrates. The shape of the resulting mesa for the lower GaAs layer was similar to that for the reference (113)B GaAs substrate, whereas that for the upper GaAs layer was similar to that for the reference (113)A GaAs substrate. An atomic-resolution analysis was also conducted by mapping using energy-dispersive X-ray spectroscopy, whereby the sublattice reversal was directly observed through the atomic arrangements.