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HARVARD Citation
Nakajima, R. et al. (n.d.). Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device. Japanese journal of applied physics. p. . [Online].
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Nakajima, R. et al. (n.d.). Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device. Japanese journal of applied physics. p. . [Online].