Cite
HARVARD Citation
Haga, K. et al. (n.d.). Direct imprinting of indium–tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor. Japanese journal of applied physics. p. . [Online].
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Haga, K. et al. (n.d.). Direct imprinting of indium–tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor. Japanese journal of applied physics. p. . [Online].