Cite
HARVARD Citation
Yamaguchi, K. et al. (n.d.). Analysis of Ti valence states in resistive switching regions of a rutile TiO2−x four-terminal memristive device. Japanese journal of applied physics. p. . [Online].
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Yamaguchi, K. et al. (n.d.). Analysis of Ti valence states in resistive switching regions of a rutile TiO2−x four-terminal memristive device. Japanese journal of applied physics. p. . [Online].