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HARVARD Citation
Kim, D. et al. (n.d.). Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process. Japanese journal of applied physics. p. . [Online].
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Kim, D. et al. (n.d.). Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process. Japanese journal of applied physics. p. . [Online].