Observations of inhomogeneity of 3C-SiC layers grown on 6H-SiC substrates by using scanning internal photoemission microscopy. (23rd February 2018)

• Record Type: Journal Article
• Authors: Shiojima, Kenji; Mishina, Naoki; Ichikawa, Naoto; Kato, Masashi
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 4(2018)Supplement
• Publication Date: 2018-02-23
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.04FR06
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: 3C-SiC layers epitaxially grown on 6H-SiC substrates have been characterized by forming Ni Schottky contacts by scanning internal photoemission microscopy (SIPM). SIPM measurements with a green laser clearly imaged domain patterns consisting of 3C- and 6H-SiC. SIPM with a red laser also revealed that boundaries of the 3C/6H and 3C/3C domains have a lower Schottky barrier. These results are consistent with the current–voltage characteristics. We found that this method is a powerful tool for investigating the inhomogeneity of both crystal quality and electrical characteristics.