Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding. (1st March 2018)

• Record Type: Journal Article
• Authors: Kitada, Takahiro; Lu, Xiangmeng; Minami, Yasuo; Kumagai, Naoto; Morita, Ken
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 4(2018)Supplement
• Publication Date: 2018-03-01
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.04FH03
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial wafers with (001) and (113)B orientations and they were directly bonded to form the coupled multilayer cavity. The (001) side cavity contains two types of InGaAs multiple quantum wells to realize optical gain for two-color lasing while a single GaAs layer of the (113)B side cavity is a nonlinear medium for efficient DFG. Lasing behavior was clearly observed for two modes under pulsed current conditions at room temperature. We found that the intensity relation between two-color lasings was dependent on the pulse duration because of the different temporal profiles of emission intensity. Simultaneous two-color lasing in the device was also confirmed by measuring the sum-frequency generation signal using a beta barium borate crystal.