Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer. (22nd May 2018)

• Record Type: Journal Article
• Authors: Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 6(2018)Supplement 2
• Publication Date: 2018-05-22
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.06JB02
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.