Cite
HARVARD Citation
Matsui, M. et al. (n.d.). Effect of plasma dissociation on fluorocarbon layers formed under C4F8/Ar pulsed plasma for SiO2 etching. Japanese journal of applied physics. p. . [Online].
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Matsui, M. et al. (n.d.). Effect of plasma dissociation on fluorocarbon layers formed under C4F8/Ar pulsed plasma for SiO2 etching. Japanese journal of applied physics. p. . [Online].