Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells. (14th February 2017)

• Record Type: Journal Article
• Authors: Minami, Yasuo; Ota, Hiroto; Lu, Xiangmeng; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-02-14
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CH01
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled cavity structure was fabricated by the direct wafer bonding of (001)- and (113)B-oriented epitaxial wafers for the efficient DFG of two modes in the (113)B side cavity, and two types of InGaAs multiple quantum wells (MQWs) were introduced only in the (001) side cavity as optical gain materials. The threshold behavior was clearly observed in the current–light output curve even at room temperature. Two-color lasing was successfully observed when the gain peaks of MQWs were considerably tuned to the cavity modes by the operating temperature.