Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching. (11th April 2018)
- Record Type:
- Journal Article
- Title:
- Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching. (11th April 2018)
- Main Title:
- Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching
- Authors:
- Ichikawa, Takashi
Yagisawa, Takashi
Furukawa, Shinichi
Taguchi, Takafumi
Nojima, Shigeki
Murakami, Sadatoshi
Tamaoki, Naoki - Abstract:
- Abstract: A topography simulation of high-aspect-ratio etching considering transports of ions and neutrals is performed, and the mechanism of reactive ion etching (RIE) residues in three-dimensional corner patterns is revealed. Limited ion flux and CF2 diffusion from the wide space of the corner is found to have an effect on the RIE residues. Cooperative simulation of lithography and topography is used to solve the RIE residue problem.
- Is Part Of:
- Japanese journal of applied physics. Volume 57:Number 6(2018)Supplement 2
- Journal:
- Japanese journal of applied physics
- Issue:
- Volume 57:Number 6(2018)Supplement 2
- Issue Display:
- Volume 57, Issue 6, Part 2 (2018)
- Year:
- 2018
- Volume:
- 57
- Issue:
- 6
- Part:
- 2
- Issue Sort Value:
- 2018-0057-0006-0002
- Page Start:
- Page End:
- Publication Date:
- 2018-04-11
- Subjects:
- Physics -- Periodicals
621.05 - Journal URLs:
- http://iopscience.iop.org/1347-4065/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.7567/JJAP.57.06JC01 ↗
- Languages:
- English
- ISSNs:
- 0021-4922
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11613.xml