Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate. (5th December 2016)

• Record Type: Journal Article
• Authors: Umezawa, Hitoshi; Shikata, Shin-ichi; Kato, Yukako; Mokuno, Yoshiaki; Seki, Akinori; Suzuki, Hiroshi; Bessho, Takeshi
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 1(2017)
• Publication Date: 2016-12-05
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.011301
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Polycrystalline diamond films have been utilized as direct bonding aluminum (DBA) substrates to improve cooling efficiency. A diamond film with a high quality factor was characterized by Raman spectroscopy and showed a high thermal conductivity of more than 1800 W m −1 K −1 and a low leakage current, even at an applied bias of 3 kV, because of the suppression of electrical conduction through the grain boundaries. The operating temperatures of Insulated-gate bipolar transistors (IGBTs) on diamond DBAs were 20–28% lower than those on AlN DBAs. The thermal resistivity of the diamond DBA module was 0.32 °C/W. The uniformity of the temperature distribution on a diamond DBA was excellent.