Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition. (9th December 2016)

• Record Type: Journal Article
• Authors: Gima, Hiroki; Zkria, Abdelrahman; Katamune, Yūki; Ohtani, Ryota; Koizumi, Satoshi; Yoshitake, Tsuyoshi
• Is Part Of: Applied physics express. Volume 10:Number 1(2017)
• Publication Date: 2016-12-09
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.015801
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, π C–N and C=N bonds that easily generate free electrons will be formed at grain boundaries.