Catalytic phosphorus and boron doping of amorphous silicon films for application to silicon heterojunction solar cells. (4th July 2017)

• Record Type: Journal Article
• Authors: Ohdaira, Keisuke; Seto, Junichi; Matsumura, Hideki
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 8(2017)Supplement 2
• Publication Date: 2017-07-04
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.08MB06
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We investigate a novel doping method, catalytic impurity doping (Cat-doping), for application to the fabrication of silicon heterojunction (SHJ) solar cells. Thin n- or p-type doped layers can be formed on intrinsic amorphous Si (a-Si) films by exposing P- or B-related radicals generated by the catalytic cracking of phosphine (PH3 ) or diborane (B2 H6 ) gas molecules. The passivation quality of underlying a-Si films can be maintained both for phosphorus (P) and boron (B) Cat-doping if we carefully choose the appropriate substrate temperature during Cat-doping. We confirm the rectifying and photovoltaic properties of an SHJ solar cell containing a B Cat-doped layer as a p-type a-Si emitter. These findings suggest the applicability of Cat-doping to SHJ solar cells.