Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process. (10th May 2018)

• Record Type: Journal Article
• Authors: Liu, Yongxun; Tanaka, Hiroyuki; Umeyama, Norio; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 6(2018)Supplement 1
• Publication Date: 2018-05-10
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.06HD03
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with the ⟨110⟩ or ⟨100⟩ channel direction have been successfully fabricated on circular silicon-on-insulator (SOI) diaphragms using a cost-effective minimal-fab process, and their electrical characteristics have been systematically investigated before and after the SOI diaphragm formation. It was found that almost the same subthreshold slope (S-slope) and threshold voltage ( V t ) are observed in the fabricated PMOSFETs before and after the SOI diaphragm formation, and they are independent of the channel direction. On the other hand, significant variations in drain current were observed in the fabricated PMOSFETs with the ⟨110⟩ channel direction after the SOI diaphragm formation owing to the residual mechanical stress-induced piezoresistive effect. It was also confirmed that electrical characteristics of the fabricated PMOSFETs with the ⟨100⟩ channel direction are almost the same before and after the SOI diaphragm formation, i.e., not sensitive to the mechanical stress. Moreover, the drain current variations at different directions of mechanical stress and current flow were systematically investigated and discussed.