First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice. (8th March 2018)

• Record Type: Journal Article
• Authors: Shirakawa, Hiroki; Araidai, Masaaki; Shiraishi, Kenji
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 4(2018)Supplement
• Publication Date: 2018-03-08
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.04FE08
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The interfacial phase change memory (iPCM) based on a GeTe/Sb2 Te3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.