Bandgap tuning of silicon nanowire arrays for application to all-silicon tandem solar cells. (10th February 2017)

• Record Type: Journal Article
• Authors: Kurokawa, Yasuyoshi; Yano, Mitsugu; Miyajima, Shinsuke; Yamada, Akira
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-02-10
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CS03
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: To reduce the diameter of silicon nanowire (SiNW) arrays for bandgap tuning, a diameter reduction (DR) process incorporating H3 PO4 oxidation and HF etching was conducted for SiNW arrays with a diameter of 30 nm and a length of 15 µm. After the DR process, the diameter of SiNW arrays around the tip was successfully reduced to below 10 nm. From the cathode luminescence measurement, the bandgap around the tip of SiNW arrays was estimated to be 1.2 eV, suggesting that bandgap widening occurred owing to the quantum size effect.