Q‐boosted switched inductor based on 1:2 transformer. Issue 11 (17th July 2019)

• Record Type: Journal Article
• Authors: Chen, Zhe; Fan, Kuikui; Zhai, Jianfeng
• Is Part Of: Microwave and optical technology letters. Volume 61:Issue 11(2019:Nov.)
• Page Start: 2635
• Page End: 2639
• Publication Date: 2019-07-17
• Subjects: quality factor -- switched inductor -- transformer; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.31948
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: In this article, the development of quality factor (Q) boosted switched inductor based on 1:2 transformer is presented. The Q‐boosted switched inductor consists of 1:2 inductor‐loaded transformer and RF switch. The eddy current in the secondary coil, equivalent inductance, and Q‐boosted factor are theoretically analyzed and derived. In the proposed topology at switch ON‐state, the eddy current in the secondary coil will decrease to 1/2, and the dissipated power due to the switch on‐resistance will decrease to 1/4, compared with conventional switched inductor with 1:1 inductor‐loaded transformer. Thus, the inductor Q will be boosted at switch ON‐state. Prototype has been designed and fabricated for the Q‐boosted and conventional switched inductors. Measured results show the peak inductor Q is greatly improved from 19.3 to 30.4 at ON‐state. The proposed Q‐boosting method is compatible with multiple planar circuit techniques, that is, PCB, low‐temperature co‐fired ceramic (LTCC), monolithic microwave integrated circuit (MMIC) techniques, etc.