Effect of B doping on electrical and thermal properties of SiC bodies fabricated by spark plasma sintering. (2019)

• Record Type: Journal Article
• Authors: Taki, Yukina; Kitiwan, Mettaya; Katsui, Hirokazu; Goto, Takashi
• Is Part Of: Materials today. Volume 16:Part 1(2019)
• Page Start: 211
• Page End: 215
• Publication Date: 2019
• Subjects: Silicon carbide -- Electrical conductivity -- Seebeck coefficient -- Spark plasma sintering; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2019.05.249
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: B-doped SiC bodies were fabricated by spark plasma sintering at 2373 K, 50 MPa, 300 s in a vacuum and N2 atmosphere. The relative density of 1 mol% B doped-SiC body sintered in a vacuum and 5 mol% B doped-SiC body sintered in N2 atmosphere were 97 and 98%, respectively. The electrical conductivity of B-doped SiC bodies sintered in a vacuum with 0.5 mol% B and that with 1 mol% B sintered in N2 atmosphere showed semi-insulative conduction in the range of 3–5×10 -3 S m -1 at room temperature. The thermal conductivity of B-doped SiC body at 0.5 at% B sintered in a vacuum were 185 W m -1 K -1 while that at 1 at% B sintered in N2 atmosphere were 177 W m -1 K -1 at room temperature.