Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions. (16th October 2018)
- Record Type:
- Journal Article
- Title:
- Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions. (16th October 2018)
- Main Title:
- Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions
- Authors:
- Wu, Quantan
Wang, Jiawei
Cao, Jingchen
Lu, Congyan
Yang, Guanhua
Shi, Xuewen
Chuai, Xichen
Gong, Yuxin
Su, Yue
Zhao, Ying
Lu, Nianduan
Geng, Di
Wang, Hong
Li, Ling
Liu, Ming - Abstract:
- Abstract: Emulating key synaptic functions in electronic devices is quite significant in bioinspired applications. Artificial synaptic thin film transistors (TFT) offer a promising solution for efficient synapse simulation. Herein, artificial synapses based on indium–gallium–zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity is investigated. Versatile synaptic functions including paired‐pulse facilitation, paired‐pulse depression, and short‐term memory to long‐term memory transition are emulated. More importantly, these synaptic functions can be mediated by modulating the composition ratio of IGZO film. These achievements represent a major advance toward implementation of full synaptic functionality in neuromorphic hardware and the strategy that combines the photonics and the electrics has great prospects in optoelectronic applications. Abstract : Artificial synapses based on the indium–gallium–zinc oxide (IGZO) thin film transistors are fabricated and the photoelectric plasticity is investigated. Furthermore, the synaptic functions can be mediated by modulating the composition ratio of IGZO film. These achievements represent a major advance toward implementation of full synaptic functionality in neuromorphic hardware and open options to modify the synaptic plasticity functions in artificial synapses.
- Is Part Of:
- Advanced Electronic Materials. Volume 4:Number 12(2018)
- Journal:
- Advanced Electronic Materials
- Issue:
- Volume 4:Number 12(2018)
- Issue Display:
- Volume 4, Issue 12 (2018)
- Year:
- 2018
- Volume:
- 4
- Issue:
- 12
- Issue Sort Value:
- 2018-0004-0012-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2018-10-16
- Subjects:
- artificial synapses -- indium–gallium–zinc oxide thin film transistors (IGZO TFT) -- persistent photoconductivity -- synaptic plasticity -- synaptic potentiation and depression
Materials -- Electric properties -- Periodicals
Materials science -- Periodicals
Magnetic materials -- Periodicals
Electronic apparatus and appliances -- Periodicals
537 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/aelm.201800556 ↗
- Languages:
- English
- ISSNs:
- 2199-160X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.848400
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11595.xml