Cite
HARVARD Citation
Wang, J. et al. (2019). Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates. Physica status solidi. 216 (4), p. n/a. [Online].
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Wang, J. et al. (2019). Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates. Physica status solidi. 216 (4), p. n/a. [Online].