2H-SiC films grown by laser chemical vapor deposition. Issue 16 (December 2015)

• Record Type: Journal Article
• Authors: Ito, Akihiko; Kanno, Hitoshi; Goto, Takashi
• Is Part Of: Journal of the European Ceramic Society. Volume 35:Issue 16(2015:Dec.)
• Page Start: 4611
• Page End: 4615
• Publication Date: 2015-12
• Subjects: Silicon carbide -- 2H-SiC -- Film -- Chemical vapor deposition; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2015.08.028
• Languages: English
• ISSNs: 0955-2219

Abstract

Abstract: We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920 K on the sapphire substrate. The films comprised a -axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182 μm h −1 .