An Ultrahigh Mobility in Isomorphic Fluorobenzo[c][1, 2, 5]thiadiazole‐Based Polymers. Issue 41 (17th September 2018)

• Record Type: Journal Article
• Authors: Lee, Junghoon; Kang, So‐Huei; Lee, Sang Myeon; Lee, Kyu Cheol; Yang, Heesoo; Cho, Yongjoon; Han, Daehee; Li, Yongfang; Lee, Byoung Hoon; Yang, Changduk
• Is Part Of: Angewandte Chemie international edition. Volume 57:Issue 41(2018)
• Page Start: 13629
• Page End: 13634
• Publication Date: 2018-09-17
• Subjects: cyclopentadithiophene -- fluoro-benzothiadiazole -- organic field-effect transistors -- polymer chemistry -- regioregularity; Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201808098
• Languages: English
• ISSNs: 1433-7851

Abstract

Abstract: To understand the effects rendered on the relevant basic physical properties and device function by controlling the regiochemistry of the cyclopenta[1, 2‐b:5, 4‐b′]dithiophene‐fluorobenzo[c][1, 2, 5]thiadiazole polymer (hereafter referred to as the CDT‐FBT polymer), two polymers, the regiorandom polymer (RA) and regioregular version (RR), respectively, are synthesized and characterized. In addition, an efficient route for synthesizing a key monomer for RR using various synthesis scope and optimizing the reaction conditions is discussed. Although RA exhibits optical, electrochemical, and morphological properties similar to RR, it shows better field‐effect transistor (FET) performance. Surprisingly, by employing a capillarity‐mediated sandwich‐casting process on a nanogrooved substrate, an unprecedented mobility of 17.8 cm 2 V −1 s −1 is obtained for RA‐based FETs; this mobility value is almost twofold greater than those of the corresponding RR‐based FETs. For the first time, this study challenges previously reported results in that high carrier mobility is related to the high degree of polymer order induced by the backbone regioregularity. Abstract : Organic field‐effect transistors : Two polymers, a regiorandom polymer (RA) and a regioregular version (RR), have been synthesized and characterized. An unprecedented mobility of 17.8 cm 2 V −1 s −1 was obtained for RA‐based field‐effect transistors (FETs). The high carrier mobility is related to the high degree of polymer order induced by backbone regioregularity.