Ion beam etching of dense and porous PZT films. (19th May 2019)

• Record Type: Journal Article
• Authors: Abdullaev, D. A.; Seregin, D. S.; Vorotilov, K. A.; Sigov, A. S.
• Is Part Of: Ferroelectrics. Volume 544(2019)
• Page Start: 75
• Page End: 81
• Publication Date: 2019-05-19
• Subjects: Ferroelectrics -- lead zirconate-titanate films -- ion beam etching -- polarization; Ferroelectricity -- Periodicals; Ferroelectric crystals -- Periodicals; 537
• DOI: 10.1080/00150193.2019.1598188
• Languages: English
• ISSNs: 0015-0193

Abstract

Abstract: Ion beam etching (IBE) of dense and porous PZT thin films at various incidence angles of the Ar + ions flux is studied. The dependence of the etch rate as a function of the Ar + ions incidence angle demonstrates maximum value at 40° for both dense and porous films. An angle of incidence of argon flux has an impact on microstructure of porous PZT film, in particular etching at the small incidence angle 5° provides a smoothing effect as a result of in plane preferential etching and a reprecipitation effect. Defects after ions flux exposure influence electrical properties appearing as a dead layer on the interface, this effect becomes more pronounced after the following heat treatment.