Maximization of Gain in Slow-Light Silicon Raman Amplifiers. (6th June 2011)

• Record Type: Journal Article
• Authors: Rukhlenko, Ivan D.; Premaratne, Malin; Agrawal, Govind P.
• Other Names: Wada Kazumi Academic Editor.
• Is Part Of: International journal of optics. Volume 2011(2011)
• Publication Date: 2011-06-06
• Subjects: Optics -- Periodicals; Optics; Periodicals; 535
• DOI: 10.1155/2011/581810
• Languages: English
• ISSNs: 1687-9392

Abstract

Abstract : We theoretically study the problem of Raman gain maximization in uniform silicon photonic-crystal waveguides supporting slow optical modes. For the first time, an exact solution to this problem is obtained within the framework of the undepleted-pump approximation. Specifically, we derive analytical expressions for the maximum signal gain, optimal input pump power, and optimal length of a silicon Raman amplifier and demonstrate that the ultimate gain is achieved when the pump beam propagates at its maximum speed. If the signal's group velocity can be reduced by a factor of 10 compared to its value in a bulk silicon, it may result in ultrahigh gains exceeding 100 dB. We also optimize the device parameters of a silicon Raman amplifier in the regime of strong pump depletion and come up with general design guidelines that can be used in practice.