The magnetization in (Zn1–xCox)Ga2O4 (x = 0.05, 0.10, and 0.20) diluted magnetic semiconductors depending on Co atoms in tetrahedral and octahedral sites. Issue 9 (12th May 2014)

• Record Type: Journal Article
• Authors: Can, Musa Mutlu
• Is Part Of: Journal of materials research. Volume 29:Issue 9(2014)
• Page Start: 1062
• Page End: 1068
• Publication Date: 2014-05-12
• Subjects: wide band gap semiconductors, -- zinc gallate, -- oxide diluted magnetic semiconductors; Materials -- Research -- Periodicals; 620.1105
• DOI: 10.1557/jmr.2014.86
• Languages: English
• ISSNs: 0884-2914

Abstract

Abstract: Abstract : The present study describes magnetic interactions in (Zn1– x Co x )Ga2 O4 ( x = 0.05, 0.10, and 0.20) particles dependant on Co atoms in both tetrahedral and octahedral sites. The effects of substituted Co atoms to magnetic character are analyzed using Curie–Weiss law. The ferromagnetic character is found dominant in (Zn1– x Co x )Ga2 O4 semiconductors for x values lower than 0.10; in addition, a specific hysteresis with 139 ± 50 Oe coercivity is observed for 5% Co-doped ZnGa2 O4 . The high Co amount in tetrahedral site increased the number of antiferromagnetic couplings and the hysteresis at 300 K disappeared for (Zn0.80 Co0.20 )Ga2 O4 particles. Furthermore, the Co +3 ions in the octahedral site decreased µeff values, per Co amounts, in the range of 4.89 ± 0.01 µB /Co to 4.44 ± 0.02 µB /Co, because of enhancing paramagnetic behaviors.